Analysis and Characterization of GaAs MOSFET with High-K Dielectric Material


Scientific Essay, 2015

8 Pages


Abstract or Introduction

Analysis and characterization of the GaAs MOSFET with High-k gate dielectric material and also do the small signal analysis and noise analysis using TCAD tool. In present research work GaAs is employed as substrate material. Band gap of GaAs is about 1.43eV. Lattice constant for GaAS is 5.65A. Substrate doping is 1x10^16 cm-3. HFO2 gate dielectric deposited on GaAs(100) substrate. HFO2 film is 20nm thick. Dielectric constant of HFO2 is order of 20-25. Permittivity (F cm^-2) is 20€0. Band gap (eV) is 4.5-6.0.HFO2 grown by Atomic Layer Deposition on GaAs. The transition metal Au is proposed dopant for GaAs. Source/Drain junction depth is 20nm. Doping levels of drain source are 1e20. Gold is used for gate metal. A working GaAs device is simulated and out performs the Si core device due to its increased mobility. It also decreases leakage current. Solve the problem of Fermi level pinning. So GaAs MOSFET is always better than Si MOSFET.

Details

Title
Analysis and Characterization of GaAs MOSFET with High-K Dielectric Material
Course
VLSI Technology
Authors
Year
2015
Pages
8
Catalog Number
V289225
ISBN (eBook)
9783656895534
ISBN (Book)
9783656895541
File size
1051 KB
Language
English
Notes
Authors wish to express deep appreciation to Mr. D. K. Gautam Sir and Mrs. Prerana Jain Madam for their motivation and guidance. Their guidance has been invaluable to the completion of this project work.
Keywords
analysis, characterization, gaas, mosfet, high-k, dielectric, material
Quote paper
Krupal Pawar (Author)Vasudha Patil (Author), 2015, Analysis and Characterization of GaAs MOSFET with High-K Dielectric Material, Munich, GRIN Verlag, https://www.grin.com/document/289225

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