A comprehensive study on properties of Semiconductors and p-n Junction


Wissenschaftlicher Aufsatz, 2012

8 Seiten


Inhaltsangabe oder Einleitung

A comprehensive study of p-n junction is necessary to design an electronic device as well as circuits. An electronic device controls the movement of electrons. The study of electronic devices requires a basic understanding of the relationship between electrons and other components of an atom. This leads to knowledge of the differences between conductors, insulators and semiconductors and to an understanding of p-type and n-type semiconductor material. p-n junction is formed by joining p-type and n-type semiconductor materials. So the concept of semiconductor, majority and minority carrier of p-type and n-type semiconductor, doping, depletion region of p-n junction, mobility and conductivity, drift and diffusion current, carrier concentration calculation and Fermi energy level is actually the comprehensive study of p-n junction.

Details

Titel
A comprehensive study on properties of Semiconductors and p-n Junction
Autor
Jahr
2012
Seiten
8
Katalognummer
V278587
ISBN (eBook)
9783656719052
ISBN (Buch)
9783656719038
Dateigröße
740 KB
Sprache
Englisch
Schlagworte
semiconductors, junction
Arbeit zitieren
Umana Rafiq (Autor:in), 2012, A comprehensive study on properties of Semiconductors and p-n Junction, München, GRIN Verlag, https://www.grin.com/document/278587

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Titel: A comprehensive study on properties of Semiconductors and p-n Junction



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