Analysis and characterization of the GaAs MOSFET with High-k gate dielectric material and also do the small signal analysis and noise analysis using TCAD tool. In present research work GaAs is employed as substrate material. Band gap of GaAs is about 1.43eV. Lattice constant for GaAS is 5.65A. Substrate doping is 1x10^16 cm-3. HFO2 gate dielectric deposited on GaAs(100) substrate. HFO2 film is 20nm thick. Dielectric constant of HFO2 is order of 20-25. Permittivity (F cm^-2) is 20€0. Band gap (eV) is 4.5-6.0.HFO2 grown by Atomic Layer Deposition on GaAs. The transition metal Au is proposed dopant for GaAs. Source/Drain junction depth is 20nm. Doping levels of drain source are 1e20. Gold is used for gate metal. A working GaAs device is simulated and out performs the Si core device due to its increased mobility. It also decreases leakage current. Solve the problem of Fermi level pinning. So GaAs MOSFET is always better than Si MOSFET.
Inhaltsverzeichnis (Table of Contents)
- 1. INTRODUCTION
- 1.1Basic MOS capacitance structure
- 1.2 GaAs used as substrate
- 2. Introduction to silvaco tcad tool
- 2.1 Process Simulator-ATHENA
- 2.3 Device Simulator-ATLAS
- 2.3.1 Inputs and Outputs of Atlas
- 3. Problem formulation
- 4. Contributory work (Part-I)
- 4.1 MOS Capacitor
- 5. Contributory work (part-II)
- 5.1 Id-Vd Characteristics for Lg=1μm of Si MOSFET
- 5.2 Id-Vg for Si MOSFET
- 5.3 Id-Vg Characteristics for Lg=1µm
Zielsetzung und Themenschwerpunkte (Objectives and Key Themes)
The main objective of this work is to analyze and characterize a GaAs MOSFET with a high-k gate dielectric material using TCAD tools. The study aims to perform small signal and noise analysis on the device and compare its performance with a traditional Si core device.
- Analysis and characterization of GaAs MOSFET with High-k gate dielectric material
- Small signal and noise analysis using TCAD tool
- Comparison of GaAs MOSFET performance with Si core devices
- Exploring the benefits of using GaAs as a substrate material
- Investigation of the impact of High-k dielectric on device characteristics
Zusammenfassung der Kapitel (Chapter Summaries)
The text begins with an introduction to the basics of MOS capacitors and the advantages of using GaAs as a substrate material for MOSFETs. It then provides an overview of the Silvaco TCAD tools, specifically the process simulator ATHENA and the device simulator ATLAS. The text then focuses on the problem formulation and the contributory work, detailing the construction of a MOS capacitor structure in the TCAD tool and its C-V characteristics. Finally, the chapter summarizes the analysis of the Id-Vd and Id-Vg characteristics of a Si MOSFET, providing insights into the device's electrical behavior.
Schlüsselwörter (Keywords)
The key terms and concepts explored in this text include GaAs MOSFET, TCAD, High-k dielectric, HFO2, Si MOSFET, performance comparison, small signal analysis, noise analysis, and device characteristics.
- Citar trabajo
- Krupal Pawar (Autor), Vasudha Patil (Autor), 2015, Analysis and Characterization of GaAs MOSFET with High-K Dielectric Material, Múnich, GRIN Verlag, https://www.grin.com/document/289225
